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參數資料
| 型號： | FDA2712 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel UltraFET Trench MOSFET 250V, 64A, 34mヘ |
| 中文描述： | 64 A, 250 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3PN, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 325K |
| 代理商： | FDA2712 |
tm
April 2007
UltraFET
F
2007 Fairchild Semiconductor Corporation
FDA2712 Rev. A
www.fairchildsemi.com
1
FDA2712
N-Channel UltraFET Trench MOSFET
250V, 64A, 34m
Ω
Features
R
DS(on)
= 29.2m
Ω
@V
GS
= 10 V, I
D
= 40A
Fast switching speed
Low gate charge
High performance trench technology for extremely low R
DS(on)
High power and current handling capability
RoHS compliant
Applications
PDP application
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been especial-
ly tailored to minimize the on-state resistance and yet maintain
superior switching performance.
D
G
S
G
S
D
TO-3PN
MOSFET Maximum Ratings
Thermal Characteristics
Symbol
V
DSS
V
GSS
Parameter
Ratings
250
±30
64
44
240
245
4.5
357
2.85
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (T
C
= 25
o
C)
I
D
A
-Continuous (T
C
= 100
o
C)
I
DM
E
AS
dv/dt
Drain Current - Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 3)
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
A
mJ
V/ns
W
W/
o
C
o
C
P
D
Power Dissipation
T
J
, T
STG
T
L
300
o
C
Symbol
Parameter
Ratings
Units
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
0.35
o
C/W
Thermal Resistance, Junction to Ambient
40
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