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參數資料
| 型號： | FDB4030L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 20 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數： | 1/5頁 |
| 文件大小： | 99K |
| 代理商： | FDB4030L |
March 1998
FDP4030L / FDB4030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
Parameter
FDP4030L
FDB4030L
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
Drain Current
- Continuous
(Note 1)
20
A
- Pulsed
(Note 1)
60
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
37.5
W
0.25
W/
°
C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
-65 to 175
°C
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
4
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
FDP4030L Rev.B1
20 A, 30 V. R
= 0.035
@ V
=10 V
R
DS(ON)
= 0.055
@ V
GS
=4.5V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process has been especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as DC/DC converters and
other battery powered circuits where fast switching, low
in-line power loss, and resistance to transients are
needed.
S
D
G
1998 Fairchild Semiconductor Corporation
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