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參數資料
| 型號： | FDB4030L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 20 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數： | 3/5頁 |
| 文件大小： | 99K |
| 代理商： | FDB4030L |
FDP4030L Rev.B1
Typical Electrical Characteristics
0
1
2
3
4
5
0
10
20
30
40
V , DRAIN-SOURCE VOLTAGE (V)
I
D
4.5V
5.0V
6.0V
V = 10V
4.0V
3.5V
-50
-25
0
25
50
75
100
125
150
175
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (°C)
D
R
D
V = 10V
I = 10A
1
1.5
2
2.5
3
3.5
4
4.5
5
0
3
6
9
12
15
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 10V
T = -55°C
Figure 5. Transfer Characteristics
.
0
10
20
30
40
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
R
D
8.0V
10V
6.0V
7.0V
V =4.5V
5.0V
5.5V
Figure 1. On-Region Characteristics.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
15
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
J
25°C
-55°C
V =0V
T = 25° C
R
D
I = 10A
T = 125° C
2
4
6
8
10
0
0.04
0.08
0.12
0.16
V , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance
Variation with
Gate-to-Source Voltage.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
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