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參數資料
| 型號： | FDB8445 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 40V, 70A, 9mOhm |
| 中文描述： | 70 A, 40 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 3/7頁 |
| 文件大小： | 334K |
| 代理商： | FDB8445 |
F
FDB8445 Re
v A
1
(W)
www.fairchildsemi.com
3
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
t
(on)
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
V
DD
= 20V, I
D
= 70A
V
GS
= 10V, R
GS
= 5
-
-
-
-
-
-
-
45
-
-
-
-
81
ns
ns
ns
ns
ns
ns
10
19
36
16
-
V
SD
Source to Drain Diode Voltage
I
SD
= 70A
I
SD
= 35A
I
F
= 70A, di/dt = 100A/
μ
s
I
F
= 70A, di/dt = 100A/
μ
s
-
-
-
-
1.25
1.0
59
77
V
V
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
-
ns
nC
Notes:
1:
Maximum wire current carrying capacity is 70A.
2:
Starting T
J
= 25
C, L = 65
μ
H, I
AS
= 56A.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
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相關代理商/技術參數 |
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|---|---|
| FDB8445_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 70A, 9m?? |
| FDB8445_F085 | 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8447L | 功能描述:MOSFET 40V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8453LZ | 功能描述:MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB86102LZ | 功能描述:MOSFET 100V NCHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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