- 您現在的位置：買賣IC網 > PDF目錄375765 > FDB8445 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench㈢ MOSFET 40V, 70A, 9mOhm PDF資料下載
參數資料
| 型號： | FDB8445 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET 40V, 70A, 9mOhm |
| 中文描述： | 70 A, 40 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 5/7頁 |
| 文件大?。?/td> | 334K |
| 代理商： | FDB8445 |
F
FDB8445 Re
v A
1
(W)
www.fairchildsemi.com
5
Figure 5.
1
10
100
0.1
1
10
100
1000
10us
100us
1ms
10ms
DC
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
=
MAX RATED
T
C
= 25
o
C
Forward Bias Safe Operating Area
0.01
0.1
1
10
100
1
10
100
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
400
500
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
C
apability
Figure 7.
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
20
40
60
80
100
120
140
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics
Figure 8.
0
1
2
3
4
0
20
40
60
80
100
120
140
V
GS
= 3.5V
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 5V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
Saturation Characteristics
Figure 9.
4
5
6
7
8
9
10
8
12
16
20
T
J
= 25
o
C
I
D
= 70A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
J
= 175
o
C
r
D
,
O
(
m
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
On-Resistance vs Gate to Source
Voltage
Figure 10.
Resistance vs Junction Temperature
-80
-40
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 70A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Normalized Drain to Source On
Typical Characteristics
相關PDF資料 |
PDF描述 |
|---|---|
| FDB8447L | 40V N-Channel PowerTrench MOSFET |
| FDB8453LZ | N-Channel PowerTrench㈢ MOSFET |
| FDB8832 | N-Channel Logic Level PowerTrench MOSFET 30V, 80A, 2.1mOHM |
| FDB8860 | N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 80A, 2.6mOhm |
| FDB8870 | N-Channel PowerTrench MOSFET 30V, 160A, 3.9mW |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDB8445_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 70A, 9m?? |
| FDB8445_F085 | 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8447L | 功能描述:MOSFET 40V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8453LZ | 功能描述:MOSFET 40V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB86102LZ | 功能描述:MOSFET 100V NCHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。