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參數資料
| 型號： | FDC6308P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| 中文描述： | 1700 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 325K |
| 代理商： | FDC6308P |
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-20
V
-15
mV/
°
C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
V
GS
= -12 V, V
DS
= 0 V
-1
100
-100
μ
A
nA
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-0.6
-1.1
2.7
-1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= -4.5 V, I
D
= -1.7 A
V
GS
= -4.5 V, I
D
= -1.7 A @125
°
C
V
GS
= -2.5 V, I
D
= -1.4 A
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -1.7 A
0.143
0.22
0.25
0.18
0.28
0.30
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-2.5
A
S
4
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
265
80
45
pF
pF
pF
V
DS
= -10 V, V
GS
= 0 V
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
6
9
14
3
3
0.7
0.8
12
18
25
9
5
ns
ns
ns
ns
nC
nC
nC
V
DD
= -10 V, I
D
= -1 A
V
GS
= -4.5 V, R
GEN
= 6
V
DS
= -10 V, I
D
= -1.7 A
V
GS
= -4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
-0.8
-1.2
A
V
V
GS
= 0 V, I
S
= -0.8 A
(Note 2)
-0.8
θ
θ
θ
!
"# "$
≤
%&&
μ
'()
≤
*&+
,%&
°
)-$
&*.
*!
,/&
°
)-$
&&&.
*!
,0&
°
)-$
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相關代理商/技術參數 |
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|---|---|
| FDC630C | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDC6310P | 功能描述:MOSFET Dual P-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6310P_Q | 功能描述:MOSFET Dual P-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6312P | 功能描述:MOSFET SSOT-6 P-CH DUAL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6312P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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