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參數資料
| 型號： | FDD6676A |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 30V的N溝道的PowerTrench式SyncFET |
| 文件頁數： | 3/8頁 |
| 文件大小： | 120K |
| 代理商： | FDD6676A |
FDD6676AS Rev A(X)
D
R
P
DS(ON)
Electrical Characteristics
(continued)
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
RR
Diode Reverse Recovery Time
I
RM
Maximum Recovery Current
Q
RR
Diode Reverse Recovery Charge
3.5
0.7
A
V
V
GS
= 0 V,
I
S
= 3.5 A
(Note 2)
0.4
25
1.9
24
ns
A
nC
dI
F
/dt = 300A/us, I
F
= 16A
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
= 40°C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
θ
JA
= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3.
Maximum current is calculated as:
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V. Package current limitation is 21A
4.
FDD6676AS_NL is a lead free product. The FDD6676AS_NL marking will appear on the reel label.
F
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| FDD6676AS | 30V N-Channel PowerTrench SyncFET |
| FDD6676AS_NL | 30V N-Channel PowerTrench SyncFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6676AS | 功能描述:MOSFET 30V N-CH DPAK POWR TRENCH SYNCFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6676AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDD6676S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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