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參數資料
| 型號： | FDD6676A |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 30V N-Channel PowerTrench SyncFET |
| 中文描述： | 30V的N溝道的PowerTrench式SyncFET |
| 文件頁數： | 4/8頁 |
| 文件大小： | 120K |
| 代理商： | FDD6676A |
FDD6676AS Rev A(X)
Typical Characteristics
0
20
40
60
80
100
0
0.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
1
1.5
2
I
D
,
2.5V
6.0V
V
GS
= 10V
4.0V
3.5V
3.0V
4.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0
20
60
80
100
I
D
, D40
R
D
,
D
V
GS
= 3.0V
6.0V
4.0V
3.5V
10V
4.5V
5.0V
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 78A
V
GS
=10V
0.004
0.008
0.012
0.016
0.02
2
4
8
10
V
GS
, GATE TO SO6
R
D
,
I
D
= 39A
T
A
= 125
o
C
T
A
=25
o
C
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
20
40
60
80
100
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.01
0.1
1
10
100
0
0.2
V
SD
, BODY DI0.4
0.6
0.8
1
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
F
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| FDD6676AS | 30V N-Channel PowerTrench SyncFET |
| FDD6676AS_NL | 30V N-Channel PowerTrench SyncFET |
| FDD6676S | 30V N-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6676AS | 功能描述:MOSFET 30V N-CH DPAK POWR TRENCH SYNCFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6676AS_NL | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDD6676S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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