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參數資料
| 型號： | FDD6676S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 78 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 121K |
| 代理商： | FDD6676S |
FDD6676S Rev. D (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Drain-Source Avalanche Energy
I
AR
Drain-Source Avalanche Current
Single Pulse, V
DD
= 15 V, I
D
= 16A
250
16
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= 1 mA
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate–Body Leakage
30
V
Breakdown Voltage Temperature
I
D
= 10 mA, Referenced to 25
°
C
24
mV/
°
C
V
DS
= 24 V,
V
GS
= ±16 V,
V
GS
= 0 V
V
DS
= 0 V
500
±100
μ
A
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 10 mA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 16 A
V
GS
= 4.5 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 16 A,T
J
=125
°
C
V
DS
= 5 V,
I
D
= 16 A
V
GS
= 10 V, V
DS
= 5 V
1
1.3
–0.9
3
V
Gate Threshold Voltage
mV/
°
C
4.6
5.2
7.2
79
6.0
7.1
9.0
m
g
FS
I
D(on)
Forward Transconductance
On-State Drain Current
S
A
60
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
G
Gate Resistance
4770
840
305
1.5
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 0 V, f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
13
13
86
34
41
10
10
23
23
138
54
58
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 15V,
V
GS
= 5 V
I
D
= 16 A,
F
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相關代理商/技術參數 |
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| FDD6680 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680A | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6680A_NBRZ002 | 制造商:Fairchild 功能描述:30V N-CA FET 95MO LF |
| FDD6680A_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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