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參數(shù)資料
| 型號： | FDD6N25 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 250V N溝道MOSFET |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 686K |
| 代理商： | FDD6N25 |
2
www.fairchildsemi.com
FDD6N25 / FDU6N25 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.7mH, I
AS
= 4.4A, V
DD
= 50V, R
G
= 25
, Starting T
J
= 25
°
C
3. I
SD
≤
4.4A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
4. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD6N25
FDD6N25TM
D-PAK
380mm
16mm
2500
FDD6N25
FDD6N25TF
D-PAK
380mm
16mm
2000
FDU6N25
FDU6N25TU
I-PAK
-
-
70
Symbol
Parameter
Conditions
Min.
Typ.
Max Units
Off Characteristics
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
μ
A
250
--
--
V
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, Referenced to 25
°
C
--
0.25
--
V/
°
C
Zero Gate Voltage Drain Current
V
DS
= 250V, V
GS
= 0V
V
DS
= 200V, T
C
= 125
°
C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
--
--
--
--
1
10
μ
A
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 2.2A
--
0.9
1.1
g
FS
Dynamic Characteristics
Forward Transconductance
V
DS
= 40V, I
D
= 2.2A
(Note 4)
--
5.5
--
S
C
iss
C
oss
C
rss
Switching Characteristics
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
194
250
pF
Output Capacitance
--
38
50
pF
Reverse Transfer Capacitance
--
5
8
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
V
DD
= 125V, I
D
= 6A
R
G
= 25
(Note 4, 5)
--
10
30
ns
Turn-On Rise Time
--
25
60
ns
Turn-Off Delay Time
--
7
24
ns
Turn-Off Fall Time
--
12
34
ns
Total Gate Charge
V
DS
= 200V, I
D
= 6A
V
GS
= 10V
(Note 4, 5)
--
4.5
6
nC
Gate-Source Charge
--
1.5
--
nC
Gate-Drain Charge
--
1.8
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
4.4
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
18
A
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 4.4A
V
GS
= 0V, I
S
= 6A
dI
F
/dt =100A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
145
--
ns
Reverse Recovery Charge
--
0.55
--
μ
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDD6N25TF | 250V N-Channel MOSFET |
| FDD6N25TM | 250V N-Channel MOSFET |
| FDD6N50F | N-Channel MOSFET 500V, 5.5A, 1.15ヘ |
| FDD6N50FTF | N-Channel MOSFET 500V, 5.5A, 1.15ヘ |
| FDD6N50FTM | N-Channel MOSFET 500V, 5.5A, 1.15ヘ |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD6N25TF | 功能描述:MOSFET 250V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6N25TM | 功能描述:MOSFET 250V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6N50 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDD6N50F | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 5.5A, 1.15ヘ |
| FDD6N50FTF | 功能描述:MOSFET 500V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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