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參數資料
| 型號： | FDD6N25TM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 250V N-Channel MOSFET |
| 中文描述： | 4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, DPAK-3 |
| 文件頁數： | 4/9頁 |
| 文件大小： | 686K |
| 代理商： | FDD6N25TM |
4
www.fairchildsemi.com
FDD6N25 / FDU6N25 Rev. A
F
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
Figure 10. Maximum Drain Current
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. V
= 10 V
2. I
D
= 2.2 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
100 ms
DC
1 ms
10 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
1
2
3
4
5
I
D
,
T
C
, Case Temperature [
o
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
0
* N otes :
1. Z
θ
JC
(t) = 2.5
o
C /W M ax.
2. D uty Factor, D =t
1
/t
2
3. T
JM
- T
C
= P
D M
* Z
θ
JC
(t)
single pulse
D =0.5
0.02
0.01
0.2
0.05
0.1
Z
θ
J
(
t
1
, S quare W ave P ulse D uration [sec]
t
1
P
DM
t
2
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| FDD6N50RTF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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