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參數資料
型號: FDD6N25TM
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 250V N-Channel MOSFET
中文描述: 4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: LEAD FREE, DPAK-3
文件頁數: 9/9頁
文件大小: 686K
代理商: FDD6N25TM
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
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when properly used in accordance with instructions for use
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Definition of Terms
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Advance Information
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Formative or In Design
Definition
This datasheet contains the design specifications for product
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Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
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make changes at any time without notice to improve design.
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Full Production
This datasheet contains final specifications. Fairchild Semiconductor
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reference information only.
Rev. I23
相關PDF資料
PDF描述
FDD6N50F N-Channel MOSFET 500V, 5.5A, 1.15ヘ
FDD6N50FTF N-Channel MOSFET 500V, 5.5A, 1.15ヘ
FDD6N50FTM N-Channel MOSFET 500V, 5.5A, 1.15ヘ
FDD6N50 500V N-Channel MOSFET
FDD6N50TF 500V N-Channel MOSFET
相關代理商/技術參數
參數描述
FDD6N50 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FDD6N50F 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 5.5A, 1.15ヘ
FDD6N50FTF 功能描述:MOSFET 500V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6N50FTM 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6N50RTF 制造商:Fairchild Semiconductor Corporation 功能描述:
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