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參數(shù)資料
| 型號： | FDD8453LZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Automotive Low-Cost Non-Volatile FPGA Family; Voltage: 1.2V; Grade: -5; Package: Lead-Free PQFP; Pins: 208; Temperature: AUTO; LUTs (k): 17 |
| 中文描述： | 50 A, 40 V, 0.0106 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, TO-252, D-PAK-3 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 280K |
| 代理商： | FDD8453LZ |
tm
September 2007
2007 Fairchild Semiconductor Corporation
FDD8453LZ Rev.C
www.fairchildsemi.com
1
F
FDD8453LZ
N-Channel PowerTrench
MOSFET
40V, 50A, 6.7m
Features
Max r
DS(on)
= 6.7m
at V
GS
= 10V, I
D
= 15A
Max r
DS(on)
= 8.7m
at V
GS
= 4.5V, I
D
= 13A
HBM ESD protection level >7kV typical (Note 4)
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
Inverter
Synchronous Rectifier
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
40
±20
50
75
16.4
100
253
65
3.1
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Single Pulse Avalanche Energy (Note 3)
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
1.9
40
°C/W
Device Marking
FDD8453LZ
Device
FDD8453LZ
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
G
S
D
D-PAK
(TO-252)
D
S
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD8453LZ_F085 | 功能描述:MOSFET 40V N-Channel POWER TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD8453LZ_F085_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 40V, 50A, 6.5m?? |
| FDD8505 | 制造商:ELMEC 功能描述: |
| FDD850N10L | 功能描述:MOSFET 100V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD850N10LD | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSF N CH 100V 15.7A DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 100V, 15.7A, 75mOhm N-Channel BoostPak |
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