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參數資料
型號: FDMA1025P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual P-Channel PowerTrench MOSFET -20V, -3.1A, 105mohm
中文描述: 3.1 A, 20 V, 0.22 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, 6 PIN
文件頁數: 3/6頁
文件大?。?/td> 338K
代理商: FDMA1025P
F
M
FDMA1025P Rev.B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
0
1
2
3
4
5
6
-
D
,
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= -2.5V
V
GS
= -1.8V
V
GS
=
-4.5V
On Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
1
2
3
4
5
6
0
1
2
3
4
5
V
GS
= -3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
-I
D
, DRAIN CURRENT(A)
V
GS
= -2.5V
V
GS
= -1.8V
V
GS
=
-4.5V
Normalized On-Resistance
Figure 3. Normalized On Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
=-3.1A
V
GS
= -4.5V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
2
3
4
5
6
0
100
200
300
400
500
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -3.1A
r
D
,
S
(
m
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
-
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0001
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
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參數描述
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