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參數資料
| 型號： | FDMA1032CZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20V Complementary PowerTrench MOSFET |
| 中文描述： | 3700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229 |
| 封裝： | 2 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, MICROFET-6 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 170K |
| 代理商： | FDMA1032CZ |
May 2006
FDMA1032CZ
20V Complementary PowerTrench
MOSFET
2006 Fairchild Semiconductor Corporation
FDMA1032CZ Rev B (W)
General Description
This device is designed specifically as a single package
solution for a DC/DC 'Switching' MOSFET in cellular
handset and other ultra-portable applications. It
features an independent N-Channel & P-Channel
MOSFET with low on-state resistance for minimum
conduction losses. The gate charge of each MOSFET
is also minimized to allow high frequency switching
directly from the controlling device. The MicroFET 2x2
package offers exceptional thermal performance for its
physical size and is well suited to switching applications.
Features
Q1: N-Channel
3.7 A, 20V.
Q2: P-Channel
–3.1 A, –20V. R
DS(ON)
= 95 m
@ V
GS
= –4.5V
R
DS(ON)
= 141 m
@ V
GS
= –2.5V
R
DS(ON)
= 68 m
@ V
GS
= 4.5V
R
DS(ON)
= 86 m
@ V
GS
= 2.5V
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
RoHS Compliant
3
2
1
4
5
6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Drain Current – Continuous
I
D
– Pulsed
Power Dissipation for Single Operation
P
D
Q1
20
±
12
3.7
6
Q2
–20
±12
–3.1
–6
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
1.4
0.7
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
(Note 1b)
(Note 1c)
(Note 1d)
°
C/W
Package Marking and Ordering Information
Device Marking
Device
032
FDMA1032CZ
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
MicroFET 2x2
S1
G1
D1
S2
G2
D2
PIN 1
S1 G1 D2
D1 G2 S2
D1 D2
相關PDF資料 |
PDF描述 |
|---|---|
| FDMA2002NZ | 30V N-Channel PowerTrench MOSFET |
| FDMA291P | Single P-Channel 1.8V Specified PowerTrench MOSFET |
| FDMA420NZ_0609 | Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30mз |
| FDMA420NZ | Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30m Ohm |
| FDMA430NZ_0609 | Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET 30V, 5.0A, 40mз |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMA1032CZ | 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET 20V MICROFET 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 20V, MICROFET |
| FDMA1032CZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V Complementary PowerTrench㈢ MOSFE |
| FDMA1430JP | 功能描述:MOSFET P-Chan -30V -2.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA2002NZ | 功能描述:MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA2002NZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
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