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參數資料
| 型號： | FDMA1032CZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20V Complementary PowerTrench MOSFET |
| 中文描述： | 3700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229 |
| 封裝： | 2 X 2 MM, HALOGEN FREE AND ROHS COMPLIANT, MICROFET-6 |
| 文件頁數： | 5/9頁 |
| 文件大?。?/td> | 170K |
| 代理商： | FDMA1032CZ |
FDMA1032CZ Rev B (W)
Typical Characteristics Q1 (N-Channel)
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 3.7A
V
DS
= 5V
10V
15V
0
100
200
300
400
500
0
5
15
20
V
DS
, DRAIN TO S10
C
C
iss
C
rss
C
oss
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 173°C/W
T
A
= 25°C
10ms
1ms
100us
0
0.0001
10
20
30
40
50
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
P
SINGLE PULSE
R
θ
JA
= 173°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=173 °C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
M
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMA1032CZ | 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET 20V MICROFET 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 20V, MICROFET |
| FDMA1032CZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V Complementary PowerTrench㈢ MOSFE |
| FDMA1430JP | 功能描述:MOSFET P-Chan -30V -2.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA2002NZ | 功能描述:MOSFET 30V Dual N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA2002NZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
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