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參數(shù)資料
| 型號： | FDMA1028NZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 3700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC |
| 封裝： | 2 X 2 MM, 0.80 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MICROFET-6 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 126K |
| 代理商： | FDMA1028NZ |
May 2006
2006 Fairchild Semiconductor Corporation
FDMA1028NZ Rev B (W)
FDMA1028NZ
Dual N-Channel PowerTrench
MOSFET
General Description
This device is designed specifically as a single package
solution for dual switching requirements in cellular
handset and other ultra-portable applications. It
features two independent N-Channel MOSFETs with
low on-state resistance for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
Features
3.7 A, 20V.
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
R
DS(ON)
= 68 m
@ V
GS
= 4.5V
R
DS(ON)
= 86 m
@ V
GS
= 2.5V
RoHS Compliant
3
2
1
4
5
6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Drain Current – Continuous
I
D
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
20
±
12
3.7
6
1.4
0.7
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
86 (Single Operation)
173 (Single Operation)
69 (Dual Operation)
151 (Dual Operation)
(Note 1b)
(Note 1c)
(Note 1d)
°
C/W
Package Marking and Ordering Information
Device Marking
Device
028
FDMA1028NZ
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
MicroFET 2x2
S1
G1
D1
S2
G2
D2
PIN 1
S1 G1 D2
D1 G2 S2
D1 D2
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| FDMA1032CZ | 20V Complementary PowerTrench MOSFET |
| FDMA2002NZ | 30V N-Channel PowerTrench MOSFET |
| FDMA291P | Single P-Channel 1.8V Specified PowerTrench MOSFET |
| FDMA420NZ_0609 | Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30mз |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDMA1028NZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET |
| FDMA1028NZ_F021 | 功能描述:MOSFET NCh 80V 171A 3.9mOhm PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA1029PZ | 功能描述:MOSFET -20V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA1029PZ_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1032CZ | 功能描述:MOSFET 20V Complementary PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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