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參數資料
| 型號： | FDMB3800N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 4800 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, 3 X 1.90 MM, 0.80 MM HEIGHT, MICROFET-8 |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 286K |
| 代理商： | FDMB3800N |
F
FDMB3800N Rev. C
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V
GS
= 0V, I
D
= 250
μ
A
I
D
= 250
μ
A,
Referenced to 25°C
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V,
T
J
= 55°C
V
GS
=
±
20V, V
DS
= 0V
30
-
-
V
-
24
-
mV/°C
I
DSS
Zero Gate Voltage Drain Current
-
-
1
μ
A
-
-
10
I
GSS
Gate-Body Leakage,
-
-
±
100
nA
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,
Referenced to 25°C
V
GS
= 10V, I
D
= 4.8A
V
GS
= 4.5V, I
D
= 4.3A
V
GS
= 10V, I
D
= 4.8A
T
J
= 125°C
V
GS
= 10V, V
DS
= 5V
V
DS
= 5V, I
D
= 4.8A
1
1.9
3
V
-
-4
-
mV/°C
R
DS(ON)
Static Drain-Source On-Resistance
-
-
32
41
40
51
m
-
43
61
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
10
-
-
-
-
A
S
14
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
-
-
-
-
350
90
40
3
465
120
60
-
pF
pF
pF
f=1.0MHz
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15V, I
D
= 1A
V
GS
= 10V, R
GEN
= 6
-
-
-
-
-
-
-
8
5
16
10
34
10
5.6
-
-
ns
ns
ns
ns
nC
nC
nC
21
2
4
1.0
1.5
V
DS
= 15V, I
D
= 7.5A,
V
GS
= 5V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
2:
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
-
-
-
-
-
1.25
1.2
22
9
A
V
ns
nC
V
GS
= 0V, I
S
=1.25 A (Note 2)
0.8
-
-
I
F
= 4.8A, dI
F
/dt=100A/
μ
s
a) 80°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b) 165°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1: 1 on letter size paper
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