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參數資料
型號: FDMB3800N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 4800 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: ROHS COMPLIANT, 3 X 1.90 MM, 0.80 MM HEIGHT, MICROFET-8
文件頁數: 7/7頁
文件大小: 286K
代理商: FDMB3800N
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
FAST
FASTr
FPS
FRFET
GlobalOptoisolator
GTO
HiSeC
I
2
C
i-Lo
ImpliedDisconnect
IntelliMAX
FACT
FACT Quiet Series
Across the board. Around the world.
The Power Franchise
Programmable Active Droop
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
ISOPLANAR
LittleFET
MICROCOUPLER
MicroFET
MicroPak
MICROWIRE
MSX
MSXPro
OCX
OCXPro
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerEdge
Rev. I18
ACEx
ActiveArray
Bottomless
Build it Now
CoolFET
CROSSVOLT
DOME
EcoSPARK
E
2
CMOS
EnSigna
PowerSaver
PowerTrench
QFET
QS
QT Optoelectronic TinyLogic
Quiet Series
RapidConfigure
RapidConnect
μ
SerDes
ScalarPump
SILENT SWITCHER
SMART START
SPM
Stealth
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TCM
TINYOPTO
TruTranslation
UHC
UltraFET
UniFET
VCX
Wire
相關PDF資料
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FDMB506P P-Channel 1.8V Logic Level PowerTrench MOSFET
FDMB668P P-Channel 1.8V Logic Level PowerTrench MOSFET -20V, -6.1A, 35mohm
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FDMC2523P P-Channel QFET -150V, -3A, 1.5ohm
FDMC2610_07 N-Channel UltraFET Trench㈢ MOSFET 200V, 9.5A, 200mヘ
相關代理商/技術參數
參數描述
FDMB3800N_0610 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench㈢ MOSFET 30V, 4.8A, 40mз
FDMB3800N_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel PowerTrench?? MOSFET 30V, 4.8A, 40m
FDMB3900AN 功能描述:MOSFET 25V Dual N-Chanenl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMB506P 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDMB668P 功能描述:MOSFET -20V P-Ch 1.8V Lgic Lvl PT MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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