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參數(shù)資料
| 型號(hào)： | FDN335 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | N溝道MOSFET的2.5V的指定PowerTrenchTM |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 210K |
| 代理商： | FDN335 |
F
FDN335N Rev. C
Typical Characteristics
(continued)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 270 °C/W
Duty Cycle, D = t /t
2
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
0
0.0001
4
8
12
16
20
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
=270
o
C/W
T
A
=25
o
C
0.01
0.1
1
10
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
10s
1s
100ms
10ms
1ms
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 270
o
C/W
T
A
= 25
o
C
R
DS(ON)
LIMIT
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 1.7A
V
DS
= 5V
10V
15V
0
100
200
300
400
500
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
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|---|---|
| FDN335N | N-Channel 2.5V Specified PowerTrenchTM MOSFET |
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| FDN336P | Single P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDN337N | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDN335N | 功能描述:MOSFET SSOT-3 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN335N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN335N_NL | 功能描述:MOSFET N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN335N_Q | 功能描述:MOSFET SSOT-3 N-CH 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN335N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN335N Series 20 V 0.07 Ohm N-Channel 2.5V Specified PowerTrench Mosfet SSOT-3 |
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