欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FDP8030L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level PowerTrench MOSFET
中文描述: 80 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數: 2/10頁
文件大小: 358K
代理商: FDP8030L
FDP8030L Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ
Max
Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche
Current
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
DD
= 20 V,
I
D
= 80 A
1500
mJ
80
A
V
GS
= 0 V, I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
23
mV/
°
C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
10
100
–100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
1
1.5
2
V
Gate Threshold Voltage
–5
mV/
°
C
V
GS
= 10 V,
I
D
= 80 A
T
J
=125
°
C
I
D
= 70 A
V
DS
= 10 V
I
D
= 80 A
3.1
4.0
3.6
3.5
5.6
4.5
m
V
GS
= 4.5 V,
V
GS
= 10 V,
V
DS
= 10 V,
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
60
A
S
170
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
10500
2700
1650
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
D(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
D (off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
20
185
160
200
120
27
48
35
225
200
240
170
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15 V,
V
GS
= 4.5 V,
R
GS
= 10
I
D
= 50 A,
R
GEN
= 10
V
DS
= 15 V,
I
D
= 80 A, V
GS
= 5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
(Note 1)
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
Drain–Source Diode Forward Voltage
80
300
A
A
(Note 1)
V
SD
V
GS
= 0 V,
I
S
= 80 A
(Note 1)
1
1.3
V
Notes:
1.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
相關PDF資料
PDF描述
FDB8030L N-Channel Logic Level PowerTrench MOSFET
FDP8441 N-Channel PowerTrench MOSFET (40V, 80A, 2.7mohm)
FDP8447L N-Channel PowerTrench㈢ MOSFET 40V, 50A, 8.7mヘ
FDP8860 N-Channel PowerTrench MOSFET
FDP8870 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mз
相關代理商/技術參數
參數描述
FDP8030L_Q 功能描述:MOSFET N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP80N06 功能描述:MOSFET 60V N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8440 功能描述:MOSFET 40V N-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8441 功能描述:MOSFET 40V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8441_F085 功能描述:MOSFET 40V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 平舆县| 秭归县| 龙胜| 南和县| 平顶山市| 吉林市| 宜章县| 崇仁县| 沈丘县| 霸州市| 资兴市| 阜平县| 额尔古纳市| 原阳县| 张家口市| 寿宁县| 筠连县| 新和县| 思茅市| 安康市| 云梦县| 乌拉特前旗| 康保县| 华亭县| 江西省| 武义县| 齐齐哈尔市| 扎囊县| 革吉县| 家居| 肥乡县| 永登县| 资中县| 阜南县| 自治县| 罗甸县| 广水市| 沂南县| 绥芬河市| 北宁市| 余姚市|