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參數(shù)資料
| 型號(hào)： | FDP8878 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m Ohm |
| 中文描述： | 40 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 201K |
| 代理商： | FDP8878 |
F
FDP8878 Rev. A
www.fairchildsemi.com
2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, V
= 30V, V
= 10V
2:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
3:
R
is measured with 1.0 in
copper on FR-4 board
4:
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
I
D
= 250
μ
A,
Referenced to 25
o
C
V
DS
= 24V
V
GS
= 0V
V
GS
= ±20V
30
-
-
V
Breakdown Voltage Temp. Coefficient
21
mV/
o
C
I
DSS
Zero Gate Voltage Drain Current
-
-
-
-
-
-
1
μ
A
T
A
= 150
o
C
250
±100
I
GSS
Gate to Source Leakage Current
nA
V
GS(TH)
V
GS(TH)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 250
μ
A,
Referenced to 25
o
C
I
D
= 40A, V
GS
= 10V
I
D
= 36A, V
GS
= 4.5V
I
D
= 40, V
GS
= 10V,
T
A
= 175
o
C
1.2
1.7
2.5
V
-5
mV/
o
C
r
DS(ON)
Drain to Source On Resistance
-
-
12
16
15
19
m
-
20
25
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
927
188
1130
3.0
17.1
9.2
2.6
1.7
3.7
1235
250
175
pF
pF
pF
nC
nC
nC
nC
nC
f = 1MHz
V
GS
= 0V to 10VV
DD
= 15V
V
GS
= 0V to 5V
I
D
= 40A
I
g
= 1.0mA
-
-
-
-
-
23
12
-
-
-
V
DD
= 15V, I
D
= 40A
V
GS
= 10V, R
GS
= 16
-
-
-
-
-
-
255
11.1
244
14.8
35.3
50
383
ns
ns
ns
ns
ns
ns
75
V
SD
Source to Drain Diode Voltage
I
SD
= 40A
I
SD
= 3.2A
I
SD
= 40A, dI
SD
/dt=100A/
μ
s
I
SD
= 40A, dI
SD
/dt=100A/
μ
s
-
-
-
-
1.1
0.85
14.4
5.1
1.25
1.2
18.8
6.7
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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