欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FDP8878
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m Ohm
中文描述: 40 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數: 4/6頁
文件大?。?/td> 201K
代理商: FDP8878
F
FDP8878 Rev. A
www.fairchildsemi.com
4
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Safe Operating Area
Figure 11. Maximum Continuous Drain Current vs
Case Temperature
Figure 12. Single Pulse Maximum Power
Dissipation
Typical Characteristics
T
A
= 25°C unless otherwise noted
4
0
12
20
Q
g
, GATE CHARGE (nC)
8
16
4
6
10
0
V
G
,
8
2
WAVEFORMS IN
ASCENDING ORDER:
ID = 40A
ID = 1A
VDD =15V
100
1000
10000
0.1
10
30
10
C
OSS
C
RSS
C
ISS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
1
f = 1MHz
V
GS
= 0V
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
500
100
10
1
0.001
0.01
0.1
1
10
100
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
1
10
100
1000
1
10
100
DC
1ms
100
μ
s
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
10
μ
s
0.1
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
C
0
75
150
V
DS
, GATE TO SOURCE VOLTAGE (V)
50
100
125
10
15
25
40
0
I
D
,
35
30
20
5
V
GS
= 10V
V
GS
= 4.5V
R
θ
JC
= 3.7
o
C/W
175
45
10
100
P
(
,
t, PULSE WIDTH (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1000
10000
R
θ
= 0.5
o
C/W
T
J
= 25
C
SINGLE PULSE
相關PDF資料
PDF描述
FDP8896 N-Channel PowerTrench MOSFET 30V, 92A, 5.9mз
FDPF12N35 350V N-Channel MOSFET
FDPF2710T Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.7 to 2.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
FDPF33N25 250V N-Channel MOSFET
FDPF39N20 200V N-Channel MOSFET
相關代理商/技術參數
參數描述
FDP8880 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8880_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDP8896 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDP8896_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 92A, 5.9mヘ
FDP8896_F085 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET. (Transferred to alternate site. Please contact local reps fo RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 洪洞县| 威海市| 北流市| 杨浦区| 宜州市| 贵阳市| 龙门县| 当雄县| 乐至县| 岑溪市| 四子王旗| 山东省| 冀州市| 疏附县| 沂南县| 福海县| 茶陵县| 称多县| 平原县| 勐海县| 涞水县| 东莞市| 岳普湖县| 榆社县| 宿州市| 柘荣县| 安岳县| 德保县| 潼关县| 贵德县| 三都| 苏尼特右旗| 徐闻县| 吉首市| 门源| 石阡县| 石城县| 克什克腾旗| 香河县| 武威市| 汶上县|