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參數(shù)資料
| 型號： | FDP8878 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15m Ohm |
| 中文描述： | 40 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 201K |
| 代理商： | FDP8878 |
F
FDP8878 Rev. A
www.fairchildsemi.com
4
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Safe Operating Area
Figure 11. Maximum Continuous Drain Current vs
Case Temperature
Figure 12. Single Pulse Maximum Power
Dissipation
Typical Characteristics
T
A
= 25°C unless otherwise noted
4
0
12
20
Q
g
, GATE CHARGE (nC)
8
16
4
6
10
0
V
G
,
8
2
WAVEFORMS IN
ASCENDING ORDER:
ID = 40A
ID = 1A
VDD =15V
100
1000
10000
0.1
10
30
10
C
OSS
C
RSS
C
ISS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
1
f = 1MHz
V
GS
= 0V
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
500
100
10
1
0.001
0.01
0.1
1
10
100
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
1
10
100
1000
1
10
100
DC
1ms
100
μ
s
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
10
μ
s
0.1
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
C
0
75
150
V
DS
, GATE TO SOURCE VOLTAGE (V)
50
100
125
10
15
25
40
0
I
D
,
35
30
20
5
V
GS
= 10V
V
GS
= 4.5V
R
θ
JC
= 3.7
o
C/W
175
45
10
100
P
(
,
t, PULSE WIDTH (s)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1000
10000
R
θ
= 0.5
o
C/W
T
J
= 25
C
SINGLE PULSE
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| FDP8880 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP8880_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDP8896 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP8896_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 92A, 5.9mヘ |
| FDP8896_F085 | 功能描述:MOSFET 30V N-Channel PowerTrench MOSFET. (Transferred to alternate site. Please contact local reps fo RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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