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參數資料
| 型號： | FDR6674A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 11500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 359K |
| 代理商： | FDR6674A |
FDR6674A Rev C(W)
Typical Characteristics
0
10
20
30
40
50
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
3.5V
2.0V
V
GS
= 4.5V
2.5V
3.0V
0.9
1.1
1.3
1.5
0
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
V
GS
= 2.5V
3.0V
3.5V
4.0V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 11.5A
V
GS
= 10V
0.005
0.01
0.015
0.02
0.025
1
2.5
4
5.5
7
8.5
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 5.8 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
15
30
45
60
0.5
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= 125
o
C
-55
o
C
V
DS
= 5V
25
o
C
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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PDF描述 |
|---|---|
| FDR6674A | Thermoelectric Cooler Controller |
| FDR6678A | 30V N-Channel PowerTrench MOSFET |
| FDR8305 | CAP CER 4.7UF 25V Y5V 1210 |
| FDR8305N | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDR6674A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-8 |
| FDR6678A | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FD-R80 | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. ELBOW TYPE 2M FREE 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
| FDR8305 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDR8305N | 功能描述:MOSFET SSOT-8 N-CH DUAL 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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