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參數資料
| 型號： | FDR6674A |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Thermoelectric Cooler Controller |
| 中文描述： | 熱電冷卻器控制器 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 359K |
| 代理商： | FDR6674A |
FDR6674A Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
===
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
23
mV/
°
C
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 12 V, V
DS
= 0 V
V
GS
= –12 V , V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
===
T
J
Temperature Coefficient
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
0.8
1.2
2
V
Gate Threshold Voltage
-4
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V, I
D
= 10.5 A
V
GS
= 4.5 V, I
D
= 10.5 A, T
J
125
°
C
V
GS
= 10 V, I
D
= 11.5 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 10 V,
I
D
= 11.5 A
8.2
11.5
6.8
9.5
16
8
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
50
A
S
75
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
5070
550
230
pF
pF
pF
V
DS
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
17
18
69
29
33
7.5
6.8
25
25
100
42
46
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
V
DS
= 15 V, I
D
= 11.5 A,
V
GS
= 4.5V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
2.1
A
V
SD
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.7
1.2
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 70°/W when
mounted on a 1in
2
pad of 2 oz copper
b) 125°/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDR6674A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-8 |
| FDR6678A | 功能描述:MOSFET SSOT-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FD-R80 | 制造商:Panasonic Electric Works 功能描述:FIBER SENSORM6 DIF. ELBOW TYPE 2M FREE 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
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| FDR8305N | 功能描述:MOSFET SSOT-8 N-CH DUAL 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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