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參數資料
| 型號： | FDR8521L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel MOSFET With Gate Driver For Load Switch Application |
| 中文描述： | 2900 mA, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數： | 3/7頁 |
| 文件大小： | 224K |
| 代理商： | FDR8521L |
F
FDR8521L Rev. C
Figure 1. Conduction Voltage Drop
Variation with Load Current.
Figure 2. Conduction Voltage Drop
Variation with Load Current.
Figure 3. On-Resistance Variation
with Input Voltage.
Typical Characteristics
(continued)
Figure 4.Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 2.
Transient themal response will change depending on the circuit board design.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
1
2
3
4
5
6
7
8
I
L
(A)
V
D
T
A
= 125
o
C
T
A
= 25
o
C
V
IN
= 12V
V
ON/OFF
= 1.5 - 8V
PW = 300
μ
S, D < 2%
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
5
6
7
8
I
L
(A)
V
D
T
A
= 125
o
C
T
A
= 25
o
C
V
IN
= 5V
V
ON/OFF
= 1.5 - 8V
PW = 300
μ
S, D < 2%
0
0.05
0.1
0.15
0.2
0.25
0.3
2
4
6
8
10
12
V
IN
, INPUT VOLTAGE (V)
V
D
I
L
= 1A
V
ON/OFF
= 1.5V -8V
PW = 300
μ
S, D <
2%
T
A
= 125
o
C
T
A
= 25
o
C
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
0.05
0.02
0.2
r
D = 0.5
0.1
0.01
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R =
156
°C/W
T - T = P * R JA
P(pk)
2
t
1
t
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDR8521L_Q | 功能描述:MOSFET SSOT-8 LD SW 3-20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR856P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR858P | 功能描述:MOSFET SSOT-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR858P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-8 |
| FDR8702H | 功能描述:MOSFET N & PCh PowerTrench 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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