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參數資料
| 型號： | FDR856P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 5100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 223K |
| 代理商： | FDR856P |
March 1998
FDR856P
P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDR856P
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage - Continuous
±20
V
I
D
Maximum Drain Current - Continuous
(Note 1a)
-5.1
A
- Pulsed
-50
P
D
Maximum Power Dissipation
(Note 1a)
1.8
W
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
FDR856P Rev.B
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
- 6.3 A, -30 V, R
DS(ON)
=0.025
@ V
= -10 V
DS(ON)
=0.040
@ V
GS
= -4.5 V.
SuperSOT
TM
-8 package:
small footprint (40% less than SO-8);low profile (1mm
thick);maximum power comperable to SO-8.
High density cell design for extremely low R
DS(ON)
.
SuperSOT
TM
-8 P-Channel enhancement mode power field
effect
transistors
are
produced
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as battery powered circuits or
portable electronics where low in-line power loss, fast
switching and resistance to transients are needed.
using
Fairchild's
D
S
D
D
S
D
D
G
SuperSOT -8
TM
pin
1
856P
1
5
6
7
8
4
3
2
1998 Fairchild Semiconductor Corporation
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDR858P | 功能描述:MOSFET SSOT-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDR858P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-8 |
| FDR8702H | 功能描述:MOSFET N & PCh PowerTrench 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDRH20 | 制造商:TOKO 制造商全稱:TOKO, Inc 功能描述:Radial Type Fixed Inductor |
| FDRH2076-470M | 制造商:TOKO 制造商全稱:TOKO, Inc 功能描述:Radial Type Fixed Inductor |
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