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參數(shù)資料
| 型號： | FDR856P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 5100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 223K |
| 代理商： | FDR856P |
FDR856P Rev.B
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area
.
Typical Electrical Characteristics
(continued)
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = 135
°C/W
T - T = P * R JA
P(pk)
t
1
t
2
r
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0
8
16
24
32
40
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-
G
V = -5V
-15V
I = -6.3A
-10V
0.1
0.3
-V , DRAIN TO SOURCE VOLTAGE (V)
1
3
7
15
30
100
200
500
1000
2000
4000
C
C s
f = 1 MHz
V = 0 V
C ss
C s
0.1
0.2
0.5
-V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
50
0.01
0.05
0.5
5
80
-
D
RDS(ON) LIMIT
T = 25°C
V = -10V
SINGLE PULSE
R = 135°C/W
DC
1s
100ms
10ms
1ms
100us
00
0.001
0.01
SINGLE PULSE TIME (SEC)
0.1
1
10
100 300
10
20
30
40
50
P
SINGLE PULSE
R = 135°C/W
T = 25°C
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| FDR858P | 功能描述:MOSFET SSOT-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDR8702H | 功能描述:MOSFET N & PCh PowerTrench 20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDRH20 | 制造商:TOKO 制造商全稱:TOKO, Inc 功能描述:Radial Type Fixed Inductor |
| FDRH2076-470M | 制造商:TOKO 制造商全稱:TOKO, Inc 功能描述:Radial Type Fixed Inductor |
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