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參數(shù)資料
型號(hào): FGH30N6S2D
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
中文描述: 45 A, 600 V, N-CHANNEL IGBT, TO-247
文件頁數(shù): 6/12頁
文件大小: 281K
代理商: FGH30N6S2D
2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
F
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
Typical Performance Curves
(Continued)
0.5
1.0
1.5
2.5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
0
8
12
16
25
o
C
125
o
C
4
24
20
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
3.0
100
50
0
t
r
,
I
EC
, FORWARD CURRENT (A)
2
12
10
125
75
25
6
8
150
200
25
o
C t
rr
25
o
C t
a
25
o
C t
b
125
o
C t
b
125
o
C t
a
dI
EC
/dt = 200A/
μ
s, V
CE
= 390V
125
o
C t
rr
4
175
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
I
EC
= 12A, V
CE
= 390V
300
400
500
700
800
t
r
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/ms)
200
600
50
0
75
100
125
150
175
900
1000
25
250
150
50
0
Q
r
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
1000
500
300
200
100
200
300
400
900
600
700
800
125
o
C, I
EC
= 12A
125
o
C, I
EC
= 6A
25
o
C, I
EC
= 6A
25
o
C, I
EC
= 12A
V
CE
= 390V
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
3.0
6.0
5.5
7.0
6.5
V
CE
= 390V, T
J
= 125°C
I
EC
= 12A
I
EC
= 6A
S
700
1000
900
400
200
500
600
800
300
4.0
3.5
5.0
4.5
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
3
7
6
10
8
V
CE
= 390V, T
J
= 125°C
I
EC
= 12A
I
EC
= 6A
I
R
,
700
1000
900
400
200
500
600
800
300
5
4
9
相關(guān)PDF資料
PDF描述
FGP30N6S2D Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC +:3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes
FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGH30N6S2 600V, SMPS II Series N-Channel IGBT
FGP30N6S2 600V, SMPS II Series N-Channel IGBT
FGB30N6S2 600V, SMPS II Series N-Channel IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FGH30N6S2D 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
FGH30S130P 功能描述:IGBT 晶體管 1300V 30A FS SA Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGH30T65UPDT_F155 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 650V 30A TRENCH TO-247-3
FGH40N120AN 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:1200V NPT IGBT
FGH40N120ANTU 功能描述:IGBT 晶體管 1200V NPT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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