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參數資料
| 型號： | FGH50N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 文件頁數： | 3/9頁 |
| 文件大小： | 195K |
| 代理商： | FGH50N6S2D |
2002 Fairchild Semiconductor Corporation
FGH50N6S2D RevA2
F
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
20
0
40
25
75
100
125
150
140
80
120
60
100
PACKAGE LIMITED
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
100
150
50
200
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100
μ
H
f
M
,
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
300
60
10
30
700
100
T
J
= 125
o
C, R
G
= 3
, L = 200
μ
H, V
CE
= 390V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.27
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
V
GE
= 15V
T
C =
75
o
C
V
GE
= 10V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
μ
s
9
11
12
15
10
6
300
500
900
t
SC
I
SC
800
13
14
12
14
8
200
400
600
700
10
16
4
2
0
V
CE
= 390V, R
G
= 3
, T
J
= 125
o
C
0.50
1.00
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
20
1.25
2.00
2.25
40
30
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 15V
60
T
J
= 25
o
C
0.75
50
1.50
1.75
T
J
= 125
o
C
T
J
= 150
o
C
I
C
,
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
10
20
40
30
60
0.50
1.00
1.50
2.0
2.25
0.75
T
J
= 150
o
C
T
J
= 125
o
C
1.75
1.25
50
DUTY CYCLE < 0.5%, V
GE
=10V
PULSE DURATION = 250
μ
s
T
J
= 25
o
C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FGH50N6S2D | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH50T65UPD | 功能描述:IGBT 晶體管 650 V 100 A 240 W RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH60N60SF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFD | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 60A Field Stop IGBT |
| FGH60N60SFDTU | 功能描述:IGBT 晶體管 N-Ch/ 60A 600V FS RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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