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參數資料
| 型號： | FGH60N6S2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大小： | 175K |
| 代理商： | FGH60N6S2 |
2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
F
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
Figure 1. DC Collector Current vs Case
Temperature
Figure 2. Minimum Switching Safe Operating Area
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
Figure 5. Collector to Emitter On-State Voltage
Figure 6. Collector to Emitter On-State Voltage
T
C
, CASE TEMPERATURE (
o
C)
I
C
,
50
25
0
50
25
75
100
125
150
175
100
75
150
125
PACKAGE LIMITED
TJ = 150
o
C
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
0
I
C
,
300
400
200
100
500
600
0
100
150
50
200
75
125
25
175
225
T
J
= 150
o
C, R
G
= 3
, V
GE
= 15V, L = 100μH
f
M
,
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
100
10
30
1000
T
J
= 125
o
C, R
G
= 3
, L = 100
μ
H, V
CE
= 390V
T
C
= 75
o
C
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
R
JC
= 0.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
100
V
GE
= 10V
50
50
500
V
GE
= 15V
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
S
,
t
S
,
11
12
16
16
12
1100
900
13
14
300
700
9
8
4
0
I
SC
t
SC
10
V
CE
= 390V, R
G
= 3
, T
J
= 125
o
C
500
15
2
6
10
14
1000
800
600
400
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
0.4
0.6
1.2
0.2
0.8
1.0
1.6
1.8
1.4
2.0
2.2
0
10
30
70
50
80
40
20
60
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 10V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
0
0.4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
C
,
0
10
30
0.6
1.2
70
50
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
GE
= 15V
80
T
J
= 25
o
C
0.2
T
J
= 150
o
C
T
J
= 125
o
C
0.8
1.0
40
20
60
1.6
1.8
1.4
2.0
2.2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FGH60N6S2 | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247 |
| FGH75N60SF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 75A Field Stop IGBT |
| FGH75N60SFTU | 功能描述:IGBT 晶體管 N-CH/75A 600V FS Planar RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGH75N60UF | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 75A Field Stop IGBT |
| FGH75N60UFTU | 功能描述:IGBT 晶體管 N-CH / 600V 75A FS Planar RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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