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參數資料
型號: FGH60N6S2
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: 600V, SMPS II Series N-Channel IGBT
中文描述: 75 A, 600 V, N-CHANNEL IGBT, TO-247
封裝: TO-247, 3 PIN
文件頁數: 5/8頁
文件大小: 175K
代理商: FGH60N6S2
2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
I
C
,
0
25
50
3.5
4.5
5.0
5.5
8.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6.0
75
150
175
3.0
125
100
200
4.0
6.5
7.0
7.5
T
J
= -55
o
C
T
J
= 25
o
C
PULSE DURATION = 250μs
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
10
0
6
4
8
12
20
40
60
80
0
14
16
100
120
140
V
CE
= 600V
V
CE
= 400V
V
CE
= 200V
I
G(REF)
= 1mA, R
L
= 7.5
I
CE
= 20A
0
2
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
3
125
25
150
5
E
T
,
4
I
CE
= 80A
I
CE
= 40A
1
R
G
= 3
, L = 100
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
0.1
10
100
R
G
, GATE RESISTANCE (
)
1
1000
E
T
,
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 20A
I
CE
= 40A
I
CE
= 80A
T
J
= 125
o
C, L = 100
μ
H, V
CE
= 390V, V
GE
= 15V
100
10
1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
20
40
0.01
0.1
10
1
C
OES
C
IES
60
80
100
FREQUENCY = 1MHz
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
1.6
9
1.8
8
10
11
12
16
2.0
2.2
V
C
,
I
CE
= 20A
2.4
7
13
14
15
2.6
2.8
DUTY CYCLE < 0.5%
PULSE DURATION = 250
μ
s
I
CE
= 40A
I
CE
= 60A
相關PDF資料
PDF描述
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相關代理商/技術參數
參數描述
FGH60N6S2 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
FGH75N60SF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 75A Field Stop IGBT
FGH75N60SFTU 功能描述:IGBT 晶體管 N-CH/75A 600V FS Planar RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGH75N60UF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, 75A Field Stop IGBT
FGH75N60UFTU 功能描述:IGBT 晶體管 N-CH / 600V 75A FS Planar RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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