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參數(shù)資料
| 型號： | FGP20N6S2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT |
| 中文描述： | 28 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 183K |
| 代理商： | FGP20N6S2 |
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
F
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves
(Continued)
E
O
,
μ
J
150
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
200
0
400
2
4
6
8
10
14
0
300
250
350
50
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
12
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
E
O
μ
J
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
2
4
6
8
10
14
0
12
150
100
200
0
350
300
250
50
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
6
7
8
9
10
2
4
6
8
10
14
0
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
11
12
13
12
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
2
4
6
8
10
14
0
12
0
5
10
15
20
25
30
35
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
80
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
140
120
100
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
2
4
6
8
10
14
0
12
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
T
J
= 25
o
C, V
GE
= 10V or 15V
T
J
= 125
o
C, V
GE
= 10V or 15V
2
4
6
8
10
14
0
12
60
40
120
100
80
R
G
= 25
, L = 500
μ
H, V
CE
= 390V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FGP20N6S2D | 功能描述:IGBT 晶體管 Comp N-CH 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGP-2601-0501-2-0FF | 制造商:YAMAICHI 制造商全稱:Yamaichi Electronics Co., Ltd. 功能描述:PC Board Transition Header (2 Rows) |
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| FGP30B_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Glass Passivated Ultrafast Rectifier |
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