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參數資料
型號: FGP20N6S2
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: 600V, SMPS II Series N-Channel IGBT
中文描述: 28 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數: 5/8頁
文件大小: 183K
代理商: FGP20N6S2
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
(Continued)
I
C
,
0
20
40
V
GE
, GATE TO EMITTER VOLTAGE (V)
60
120
T
J
= 125
o
C
T
J
= -55
o
C
100
80
T
J
= 25
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
6
8
10
12
14
16
4
V
G
,
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 1mA, R
L
= 42.6
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 600V
V
CE
= 400V
5
10
15
20
25
35
0
30
6
4
8
0
16
12
10
14
2
T
C
, CASE TEMPERATURE (
o
C)
E
T
,
m
J
R
G
= 25
, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 14A
I
CE
= 7A
I
CE
= 3A
0.2
0
0.8
0.6
0.4
50
25
75
100
125
150
R
G
, GATE RESISTANCE (
)
E
T
,
m
J
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
0.1
0.05
10
1
I
CE
= 14A
1
10
100
1000
I
CE
= 7A
I
CE
= 3A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
10
20
30
40
50
0.0
0.4
1.2
0.8
FREQUENCY = 1MHz
C
OES
C
IES
60
70
80
90
100
0.2
0.6
1.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
2.0
9
2.2
2.6
2.4
8
10
11
12
16
2.8
V
C
,
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
3.6
7
13
14
15
DUTY CYCLE < 0.5%
I
CE
= 14A
5
I
CE
= 3A
I
CE
= 7A
3.0
3.2
3.4
相關PDF資料
PDF描述
FGB20N6S2 600V, SMPS II Series N-Channel IGBT
FGH30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGP30N6S2D Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC +:3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes
FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGH30N6S2 600V, SMPS II Series N-Channel IGBT
相關代理商/技術參數
參數描述
FGP20N6S2D 功能描述:IGBT 晶體管 Comp N-CH 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGP-2601-0501-2-0FF 制造商:YAMAICHI 制造商全稱:Yamaichi Electronics Co., Ltd. 功能描述:PC Board Transition Header (2 Rows)
FGP-3/4-BLK 制造商:ICO RALLY 功能描述: 制造商:ICO Rally 功能描述:
FGP30B 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Glass Passivated Ultrafast Rectifier
FGP30B_11 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Glass Passivated Ultrafast Rectifier
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