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參數資料
| 型號： | FMM6G50US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Compact & Complex Module |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 24PM-AA, 24 PIN |
| 文件頁數： | 1/9頁 |
| 文件大小： | 987K |
| 代理商： | FMM6G50US60 |
2003 Fairchild Semiconductor Corporation
FMM6G50US60 Rev. A
IGBT
F
FMM6G50US60
Compact & Complex Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control and
general inverters where short-circuit ruggedness is
required.
Features
Short Circuit rated Time 10us @ T
C
= 100
°
C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE
(sat) = 2.1 V @ I
C
= 50A
High Input Impedance
3 Phase Rectifier Circuit
Fast & Soft Anti-Parallel FWD
Built-in NTC Thermistor
UL Certified No. E209204
Application
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
Internal Circuit Diagram
R
S
T
P
P+
GU
EU
GV
EV
-GV
U
GW
EW
V
-GW
W
-GU
E
NTC
T1
T2
N
N-
Package Code : 24PM-AA
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
SC
V
RRM
I
O
Description
FMM6G50US60
600
± 20
50
100
50
100
139
10
1600
50
Units
V
V
A
A
A
A
W
us
V
A
Inverter
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Surge Forward Current
@ 1Cycle at 60Hz, Peak value Non-Repetitive
Energy pulse @ 1Cycle at 60Hz
@ T
C
= 80
°
C
@ T
C
= 80
°
C
@ T
C
= 25
°
C
@ T
C
= 100
°
C
Converter
I
FSM
320
A
I
2
t
T
J
T
STG
V
ISO
419
A
2
s
°
C
°
C
V
N.m
Common
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Mounting part Screw
-40 to +150
-40 to +125
2500
4.0
@ AC 1minute
@ M4
Mounting Torque
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| FMM7G20US60SN | 功能描述:IGBT 模塊 Compact Module Complex RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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