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參數資料
| 型號： | FP20R06KL4 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT-Module |
| 中文描述： | 25 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-23 |
| 文件頁數： | 13/13頁 |
| 文件大小： | 237K |
| 代理商： | FP20R06KL4 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FP20R06W1E3 | 功能描述:IGBT 模塊 N-CH 600V 27A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP20R06W1E3_B11 | 制造商:Infineon Technologies AG 功能描述:IGBT Module 20A 600V |
| FP20R06YE3 | 功能描述:IGBT 模塊 N-CH 600V 27A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP20R06YE3_B4 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP20SD | 制造商:Thomas & Betts 功能描述:CONTACTS |
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