- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375872 > FP20R06KL4 (INFINEON TECHNOLOGIES AG) IGBT-Module PDF資料下載
參數(shù)資料
| 型號(hào)： | FP20R06KL4 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT-Module |
| 中文描述： | 25 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-23 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 237K |
| 代理商： | FP20R06KL4 |
Technische Information / Technical Information
FP20R06KL4
IGBT-Module
IGBT-Modules
Vorlufig
Preliminary
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
V
ISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
min.
typ.
max.
Durchlaspannung
forward voltage
T
vj
= 150°C, I
F
= 20 A
V
F
-
0,95
-
V
Schleusenspannung
threshold voltage
T
vj
= 150°C
V
(TO)
-
0,71
-
V
Ersatzwiderstand
slope resistance
T
vj
= 150°C
r
T
-
12
-
m
Sperrstrom
reverse current
T
vj
= 150°C, V
R
= 800 V
I
R
-
5
-
mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T
C
= 25°C
R
AA'+CC'
-
11
-
m
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
typ.
max.
V
GE
= 15V, T
vj
= 25°C, I
C
=
V
GE
= 15V, T
vj
= 125°C, I
C
=
20 A
20 A
V
CE sat
-
-
1,95
2,2
2,55
-
V
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25°C, I
C
= 0,5mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
1,1
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
=20V, T
vj
=25°C
I
GES
-
-
400
nA
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
= 80 nH
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
= 80 nH
t
P
10μs, V
GE
15V, R
G
= 47 Ohm
T
vj
125°C, V
CC
=
47 Ohm
47 Ohm
t
d,on
-
-
22
31
-
-
ns
ns
ns
ns
ns
ns
ns
ns
Anstiegszeit (induktive Last)
rise time (inductive load)
47 Ohm
47 Ohm
t
r
-
-
23
37
-
-
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
47 Ohm
47 Ohm
t
d,off
-
-
143
154
-
-
Fallzeit (induktive Last)
fall time (inductive load)
47 Ohm
47 Ohm
t
f
-
-
22
38
-
-
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
47 Ohm
E
on
-
0,7
-
mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
47 Ohm
E
off
-
0,6
-
mWs
Kurzschluverhalten
SC Data
360 V
I
SC
-
90
-
A
-
mA
V
GE
= 0V, T
vj
=125°C, V
CE
= 600V
I
CES
-
5,0
2(12)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FP25R12KE3 | IGBT-Module |
| FP40R12KE3G | Automotive Low-Cost Non-Volatile FPGA Family; Voltage: 1.2V; Grade: -5; Package: Lead-Free ftBGA; Pins: 256; Temperature: AUTO; LUTs (k): 17 |
| FP50N06L | 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs |
| FP50R12KE3 | Elektrische Eigenschaften / Electrical properties |
| FP75R12KE3 | Elektrische Eigenschaften / Electrical properties |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FP20R06W1E3 | 功能描述:IGBT 模塊 N-CH 600V 27A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP20R06W1E3_B11 | 制造商:Infineon Technologies AG 功能描述:IGBT Module 20A 600V |
| FP20R06YE3 | 功能描述:IGBT 模塊 N-CH 600V 27A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP20R06YE3_B4 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP20SD | 制造商:Thomas & Betts 功能描述:CONTACTS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。