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參數(shù)資料
| 型號： | FP20R06KL4 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT-Module |
| 中文描述： | 25 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-23 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 237K |
| 代理商： | FP20R06KL4 |
Technische Information / Technical Information
FP20R06KL4
IGBT-Module
IGBT-Modules
Vorlufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min.
typ.
max.
Modulinduktivitt
stray inductance module
L
CE
-
-
40
nH
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T
C
= 25°C
R
CC'+EE'
-
13
-
m
Diode Wechselrichter/ Diode Inverter
Durchlaspannung
forward voltage
min.
typ.
max.
V
GE
= 0V, T
vj
= 25°C, I
F
= 20 A
V
GE
= 0V, T
vj
= 125°C, I
F
= 20 A
I
F
=I
Nenn
, - di
F
/dt = 1000 A/us
V
GE
= -10V, T
vj
= 25°C, V
R
= 300 V
V
GE
= -10V, T
vj
= 125°C, V
R
= 300 V
I
F
=I
Nenn
, - di
F
/dt = 1000 A/us
V
GE
= -10V, T
vj
= 25°C, V
R
= 300 V
V
GE
= -10V, T
vj
= 125°C, V
R
= 300 V
I
F
=I
Nenn
, - di
F
/dt = 1000 A/us
V
GE
= -10V, T
vj
= 25°C, V
R
= 300 V
V
GE
= -10V, T
vj
= 125°C, V
R
= 300 V
V
F
-
-
1,7
1,7
2,15
-
V
V
Rückstromspitze
peak reverse recovery current
I
RM
-
-
20
23
-
-
A
A
Sperrverzgerungsladung
recovered charge
Q
r
-
-
1
-
-
μAs
μAs
1,7
Abschaltenergie pro Puls
reverse recovery energy
E
rec
-
-
0,2
0,35
typ.
-
-
mWs
mWs
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
max.
V
GE
= 15V, T
vj
= 25°C, I
C
=
V
GE
= 15V, T
vj
= 125°C, I
C
=
20,0 A
20,0 A
V
CE sat
-
-
1,95
2,2
2,55
-
V
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25°C, I
C
= 0,5mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
C
ies
-
1,1
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
Diode Brems-Chopper/ Diode Brake-Chopper
Durchlaspannung
forward voltage
min.
typ.
max.
T
vj
= 25°C, I
F
=
T
vj
= 125°C, I
F
=
20A
20A
V
F
-
-
2,45
2,55
2,9
-
V
V
NTC-Widerstand/ NTC-Thermistor
Nennwiderstand
rated resistance
min.
typ.
max.
T
C
= 25°C
R
25
-
5
-
k
Abweichung von R
100
deviation of R
100
T
C
= 100°C, R
100
= 493
R/R
-5
5
%
Verlustleistung
power dissipation
T
C
= 25°C
P
25
20
mW
B-Wert
B-value
R
2
= R
1
exp [B(1/T
2
- 1/T
1
)]
B
25/50
3375
K
5,0
-
mA
V
GE
= 0V, T
vj
= 125°C, V
CE
= 600V
-
3(12)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FP20R06W1E3 | 功能描述:IGBT 模塊 N-CH 600V 27A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP20R06W1E3_B11 | 制造商:Infineon Technologies AG 功能描述:IGBT Module 20A 600V |
| FP20R06YE3 | 功能描述:IGBT 模塊 N-CH 600V 27A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP20R06YE3_B4 | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FP20SD | 制造商:Thomas & Betts 功能描述:CONTACTS |
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