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參數資料
| 型號： | FQU6N50C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology |
| 中文描述： | 4.5 A, 500 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | IPAK-3 |
| 文件頁數： | 2/9頁 |
| 文件大小： | 687K |
| 代理商： | FQU6N50C |
Rev. B, June 2004
F
2004 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 26.6 mH, I
AS
= 4.5A, V
= 50V, R
G
= 25
,
Starting T
= 25°C
3. I
≤
4.5A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
500
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.8
--
V/°C
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
--
4.0
V
V
GS
= 10 V, I
D
= 2.25A
--
1.0
1.2
V
DS
= 40 V, I
D
= 2.25A
(Note 4)
--
4.5
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
540
80
15
700
105
20
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 250 V, I
D
= 4.5A,
R
G
= 25
(Note 4, 5)
--
--
--
--
--
--
--
10
35
55
45
19
2.8
8.8
30
80
120
100
25
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 400 V, I
D
= 4.5A,
V
GS
= 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
4.5
18
1.4
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 4.5 A
V
GS
= 0 V, I
S
= 4.5 A,
dI
F
/ dt = 100 A/
μ
s
(Note 4)
260
1.6
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