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參數資料
| 型號： | FSAM30SH60A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | AC MOTOR CONTROLLER, 60 A, DMA32 |
| 文件頁數： | 10/17頁 |
| 文件大小： | 989K |
| 代理商： | FSAM30SH60A |
2002 Fairchild Semiconductor Corporation
F
Rev. A, September 2002
Mechanical Characteristics and Ratings
Fig. 8. Flatness Measurement Position of The Ceramic Substrate
Note:
7. Do not make over torque or mounting screws. Much mounting torque may cause ceramic cracks and bolts and Al heat-fin destruction.
8. Avoid one side tightening stress. Fig.9 shows the recommended torque order for mounting screws. Uneven mounting can cause the SPM ceramic substrate to
be damaged.
Fig. 9. Mounting Screws Torque Order
Item
Condition
Limits
Typ.
10
0.98
-
35
Unit
Min.
8
0.78
0
-
Max.
12
1.17
+120
-
Mounting Torque
Mounting Screw: M4
(Note 7 and 8)
Recommended 10Kgcm
Recommended 0.98Nm
Note Fig.8
Kgcm
Nm
um
g
Ceramic Flatness
Weight
(+)
(+)
(+)
Datum Line
1
2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSAM30SH60A | 制造商:Fairchild Semiconductor Corporation 功能描述:POWER SUPPLY IC 制造商:Fairchild Semiconductor Corporation 功能描述:Power Supply IC |
| FSAM30SH60A_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module) |
| FSAM30SM60A | 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM30SM60SL | 功能描述:IGBT 模塊 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM50SM60A | 功能描述:IGBT 晶體管 600V -50A SMART POWER MODULE RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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