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參數資料
| 型號： | FSAM30SH60A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | AC MOTOR CONTROLLER, 60 A, DMA32 |
| 文件頁數： | 4/17頁 |
| 文件大小： | 989K |
| 代理商： | FSAM30SH60A |
2002 Fairchild Semiconductor Corporation
F
Rev. A, September 2002
Internal Equivalent Circuit and Input/Output Pins
Note:
1) Inverter low-side is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving, current sensing and
protection functions.
2) Inverter power side is composed of four inverter dc-link input pins and three inverter output pins.
3) Inverter high-side is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.
Fig. 3.
Bottom View
COM(L)
VCC
IN(UL)
IN(VL)
IN(W L)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(W L)
(26) N
U
(27) N
V
(28) N
W
(29) U
(30) V
(31) W
(32) P
(23) V
S(W )
(22) V
B(W )
(21) V
CC(WH)
(19) V
S(V)
(18) V
B(V)
(17) V
CC(VH)
(9) C
SC
(8) C
FOD
(7) V
FO
(6) COM
(L)
(5) IN
(W L)
(4) IN
(VL)
(3) IN
(UL)
(2) COM
(L)
(1) V
CC(L)
(10) R
SC
(25) R
TH
(24) V
TH
VCC
VB
OUT
COM
VS
IN
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM
VS
IN
(20) IN
(W H)
(15) IN
(VH)
(16) COM
(H)
(14) V
S(U)
(13) V
B(U)
(12) V
CC(UH)
(11) IN
(UH)
THERMISTOR
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| FSAM30SM60A | SPMTM (Smart Power Module) General Description |
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| FSAT66L6X | Low Voltage Single SPST Normally Open Analog Switch with TTL Compatible Control Input |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSAM30SH60A | 制造商:Fairchild Semiconductor Corporation 功能描述:POWER SUPPLY IC 制造商:Fairchild Semiconductor Corporation 功能描述:Power Supply IC |
| FSAM30SH60A_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module) |
| FSAM30SM60A | 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM30SM60SL | 功能描述:IGBT 模塊 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM50SM60A | 功能描述:IGBT 晶體管 600V -50A SMART POWER MODULE RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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