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參數資料
| 型號： | FSAM30SH60A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | AC MOTOR CONTROLLER, 60 A, DMA32 |
| 文件頁數： | 8/17頁 |
| 文件大小： | 989K |
| 代理商： | FSAM30SH60A |
2002 Fairchild Semiconductor Corporation
F
Rev. A, September 2002
Electrical Characteristics
Control Part
(T
J
= 25°C, Unless Otherwise Specified)
Note:
5. Short-circuit current protection is functioning only at the low-sides. It would be recommended that the value of the external sensing resistor (R
) should be
selected around 50
in order to make the SC trip-level of about 45A at the shunt resistors (R
,R
,R
) of 0
. For the detailed information about the
relationship between the external sensing resistor (R
) and the shunt resistors (R
,R
,R
), please see Fig. 7.
6. The fault-out pulse width t
FOD
depends on the capacitance value of C
FOD
according to the following approximate equation : C
FOD
= 18.3 x 10
-6
x t
FOD
[F]
Item
Symbol
V
CC
Condition
Min.
13.5
Typ. Max. Unit
15
16.5
Control Supply Voltage
Applied between
V
CC(UH)
, V
CC(VH)
, V
CC(WH)
, V
CC(L)
- COM
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
,
V
B(W)
- V
S(W)
V
CC
= 15V
IN
(UL, VL, WL)
= 5V
V
CC
= 15V
IN
(UH, VH, WH)
= 5V
V
BS
= 15V
IN
(UH, VH, WH)
= 5V
V
SC
= 0V, V
FO
Circuit: 4.7k
to 5V Pull-up
V
SC
= 1V, V
FO
Circuit: 4.7k
to 5V Pull-up
T
C
≤
100°C, T
J
≤
125°C
-20°C
≤
T
C
≤
100°C
V
High-side Bias Voltage
V
BS
13.5
15
16.5
V
Quiescent V
CC
Supply Cur-
rent
I
QCCL
V
CC(L)
- COM
(L)
-
-
26
mA
I
QCCH
V
CC(U)
, V
CC(V)
, V
CC(W)
- COM
(H)
-
-
130
uA
Quiescent V
BS
Supply Cur-
rent
Fault Output Voltage
I
QBS
V
B(U)
- V
S(U)
, V
B(V)
-V
S(V)
,
V
B(W)
- V
S(W)
-
-
420
uA
V
FOH
V
FOL
f
PWM
t
dead
4.5
-
-
3
-
-
-
V
V
1.1
-
-
PWM Input Frequency
Allowable Input Signal
Blanking Time considering
Leg Arm-short
Short-Circuit Trip Level
Sensing Voltage
of IGBT Current
Supply Circuit Under-
Voltage Protection
15
-
kHz
us
V
SC(ref)
V
SEN
-20°C
≤
T
J
≤
125°C, V
CC
= 15V (Note 5)
T
C
= 25°C, @ R
SC
= 50
, R
SU
= R
SV
= R
SW
= 0
and I
C
= 45A (Note Fig. 7)
T
J
≤
125°C
Detection Level
Reset Level
Detection Level
Reset Level
C
FOD
= 33nF (Note 6)
High-Side
Applied between IN
(UH)
, IN
(VH)
,
IN
(WH)
- COM
(H)
Low-Side
Applied between IN
(UL)
, IN
(VL)
,
IN
(WL)
- COM
(L)
@ T
C
= 25°C (Note Fig. 6)
@ T
C
= 80°C (Note Fig. 6)
0.45
0.45
0.51
0.51
0.56
0.56
V
V
UV
CCD
UV
CCR
UV
BSD
UV
BSR
t
FOD
V
IN(ON)
V
IN(OFF)
V
IN(ON)
V
IN(OFF)
R
TH
11.5
12
7.3
8.6
1.4
-
3.0
-
3.0
-
-
12
12.5
9.0
10.3
1.8
-
-
-
-
50
6.3
12.5
13
10.8
12
2.0
0.8
-
0.8
-
-
-
V
V
V
V
ms
V
V
V
V
k
k
Fault Output Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
ON Threshold Voltage
OFF Threshold Voltage
Resistance of Thermistor
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSAM30SH60A | 制造商:Fairchild Semiconductor Corporation 功能描述:POWER SUPPLY IC 制造商:Fairchild Semiconductor Corporation 功能描述:Power Supply IC |
| FSAM30SH60A_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:SPMTM (Smart Power Module) |
| FSAM30SM60A | 功能描述:IGBT 模塊 600V/30A/ SPM2 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM30SM60SL | 功能描述:IGBT 模塊 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM50SM60A | 功能描述:IGBT 晶體管 600V -50A SMART POWER MODULE RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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