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參數(shù)資料
| 型號(hào)： | FSAM30SM60A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | SPMTM (Smart Power Module) General Description |
| 中文描述： | AC MOTOR CONTROLLER, 60 A, DMA32 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 2335K |
| 代理商： | FSAM30SM60A |
2003 Fairchild Semiconductor Corporation
F
Rev. E, August 2003
Integrated Power Functions
600V-30A IGBT inverter for 3-phase DC/AC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 14 and 15.
For inverter low-side IGBTs: Gate drive circuit, Short-Circuit (SC) protection
Control supply circuit under-voltage (UV) protection
Temperature Monitoring: System over-temperature monitoring using built-in thermistor
Note) Available temperature monitoring circuit is given in Fig. 15.
Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side control supply circuit)
Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Fig. 2.
Top View
(9) C
SC
(12) V
CC(UH)
(14) V
S(U)
(17) V
CC(VH)
(19) V
S(V)
(21) V
CC(WH)
(23) V
S(W)
(26) N
U
(27) N
V
(28) N
W
(29) U
(30) V
(31) W
(32) P
Detecting Point
Ceramic Substrate
(8) C
FOD
(11) IN
(UH)
(13) V
B(U)
(16) com
(H)
(18) V
B(V)
(20) IN
(WH)
(22) V
B(W)
(25) R
TH
(1) V
(2) com
(L)
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) com
(L)
(7) FO
(10) R
SC
(15) IN
(VH)
(24) V
TH
Case Temperature (T
C
)
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| FSAM30SM60SL | 功能描述:IGBT 模塊 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM50SM60A | 功能描述:IGBT 晶體管 600V -50A SMART POWER MODULE RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FSAM75SM60A | 功能描述:IGBT 模塊 600V -75A SMART POWER MODULE RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM75SM60SL | 功能描述:IGBT 模塊 600V/75A Smart Power RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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