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參數資料
| 型號： | FSAM30SM60A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | SPMTM (Smart Power Module) General Description |
| 中文描述： | AC MOTOR CONTROLLER, 60 A, DMA32 |
| 文件頁數： | 6/16頁 |
| 文件大?。?/td> | 2335K |
| 代理商： | FSAM30SM60A |
2003 Fairchild Semiconductor Corporation
F
Rev. E, August 2003
Absolute Maximum Ratings
Thermal Resistance
Note:
2. For the measurement point of case temperature(T
), please refer to Fig. 2.
3. The thickness of thermal grease should not be more than 100um.
Electrical Characteristics
(T
j
= 25°C, Unless Otherwise Specified)
Inverter Part
Item
Symbol
Collector - Emitter
Saturation Voltage
V
IN
= 0V
FWDi Forward Voltage
V
FM
V
IN
= 5V
Switching Times
t
ON
V
PN
= 300V, V
CC
= V
BS
= 15V
I
C
= 30A, T
J
= 25°C
V
IN
= 5V
0V, Inductive Load
(High, Low-side)
t
C(OFF)
t
rr
Collector - Emitter
Leakage Current
Note:
4. t
and t
include the propagation delay time of the internal drive IC. t
C(ON)
and t
C(OFF)
are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Fig. 4.
Item
Symbol
R
th(j-c)Q
Condition
Min. Typ.
-
Max.
2.0
Unit
°C/W
Junction to Case Thermal
Resistance
Each IGBT under Inverter Operating Condition
Each FWDi under Inverter Operating Condition
-
R
th(j-c)F
-
-
3.2
°C/W
Contact Thermal
Resistance
R
th(c-f)
Ceramic Substrate (per 1 Module)
Thermal Grease Applied (Note 3)
-
-
0.06
°C/W
Condition
Min.
-
Typ.
-
Max.
2.3
Unit
V
V
CE(SAT)
V
CC
= V
BS
= 15V
I
C
= 30A, T
J
= 25°C
I
C
= 30A, T
J
= 25°C
-
-
-
-
-
-
-
-
2.6
-
-
-
-
-
250
V
us
us
us
us
us
μ
A
(Note 4)
V
CE
= V
CES
, T
J
= 25°C
0.39
0.2
0.95
0.39
0.13
-
t
C(ON)
t
OFF
I
CES
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSAM30SM60SL | 功能描述:IGBT 模塊 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM50SM60A | 功能描述:IGBT 晶體管 600V -50A SMART POWER MODULE RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FSAM75SM60A | 功能描述:IGBT 模塊 600V -75A SMART POWER MODULE RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM75SM60SL | 功能描述:IGBT 模塊 600V/75A Smart Power RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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