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參數資料
| 型號： | FSAM30SM60A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | SPMTM (Smart Power Module) General Description |
| 中文描述： | AC MOTOR CONTROLLER, 60 A, DMA32 |
| 文件頁數： | 5/16頁 |
| 文件大小： | 2335K |
| 代理商： | FSAM30SM60A |
2003 Fairchild Semiconductor Corporation
F
Rev. E, August 2003
Absolute Maximum Ratings
(T
J
= 25°C, Unless Otherwise Specified)
Inverter Part
Note:
1. It would be recommended that the average junction temperature should be limited to T
J
≤
125
°
C (@T
C
≤
100
°
C) in order to guarantee safe operation.
Control Part
Total System
Item
Symbol
V
PN
V
PN(Surge)
V
CES
± I
C
± I
C
± I
CP
Condition
Rating
450
500
600
30
16
60
Unit
V
V
V
A
A
A
Supply Voltage
Supply Voltage (Surge)
Collector-Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Applied between P- N
U
, N
V
, N
W
Applied between P- N
U
, N
V
, N
W
T
C
= 25°C
T
C
= 100°C
T
C
= 25°,
Instantaneous Value (Pulse)
T
C
= 25°C per One Chip
(Note 1)
Collector Dissipation
Operating Junction Temperature
P
C
T
J
62
W
°C
-20 ~ 125
Item
Symbol
V
CC
Condition
Rating
20
Unit
V
Control Supply Voltage
Applied between V
CC(UH)
, V
CC(VH)
, V
CC(WH)
- COM
(H)
,
V
CC(L)
- COM
(L)
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
, V
B(W)
-
V
S(W)
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
- COM
(H)
IN
(UL)
, IN
(VL)
, IN
(WL)
- COM
(L)
Applied between V
FO
- COM
(L)
Sink Current at V
FO
Pin
Applied between C
SC
- COM
(L)
High-side Control Bias Voltage
V
BS
20
V
Input Signal Voltage
V
IN
-0.3 ~ V
CC
+0.3
V
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
V
FO
I
FO
V
SC
-0.3 ~ V
CC
+0.3
5
-0.3 ~ V
CC
+0.3
V
mA
V
Item
Symbol
V
PN(PROT)
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 25°C, Non-repetitive, less than 6
μ
s
T
C
Note Fig.2
T
STG
V
ISO
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat-sink Plate
Condition
Rating
400
Unit
V
Self Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
-20 ~ 100
-20 ~ 125
2500
°C
°C
V
rms
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSAM30SM60SL | 功能描述:IGBT 模塊 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM50SM60A | 功能描述:IGBT 晶體管 600V -50A SMART POWER MODULE RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FSAM75SM60A | 功能描述:IGBT 模塊 600V -75A SMART POWER MODULE RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSAM75SM60SL | 功能描述:IGBT 模塊 600V/75A Smart Power RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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