欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FSAM30SM60A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 運動控制電子
英文描述: SPMTM (Smart Power Module) General Description
中文描述: AC MOTOR CONTROLLER, 60 A, DMA32
文件頁數: 3/16頁
文件大小: 2335K
代理商: FSAM30SM60A
2003 Fairchild Semiconductor Corporation
F
Rev. E, August 2003
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
V
CC(L)
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
COM
(L)
V
FO
C
FOD
C
SC
R
SC
IN
(UH)
V
CC(UH)
V
B(U)
V
S(U)
IN
(VH)
COM
(H)
V
CC(VH)
V
B(V)
V
S(V)
IN
(WH)
V
CC(WH)
V
B(W)
V
S(W)
V
TH
R
TH
N
U
N
V
N
W
U
V
W
P
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Low-side Common Supply Ground
Signal Input for Low-side U Phase
Signal Input for Low-side V Phase
Signal Input for Low-side W Phase
Low-side Common Supply Ground
Fault Output
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-Circuit Current Detection Input
Resistor for Short-Circuit Current Detection
Signal Input for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Signal Input for High-side V Phase
High-side Common Supply Ground
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input for High-side W Phase
High-side Bias Voltage for W Phase IC
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
Thermistor Bias Voltage
Series Resistor for the Use of Thermistor (Temperature Detection)
Negative DC–Link Input for U Phase
Negative DC–Link Input for V Phase
Negative DC–Link Input for W Phase
Output for U Phase
Output for V Phase
Output for W Phase
Positive DC–Link Input
相關PDF資料
PDF描述
FSAM50SM60A SPMTM (Smart Power Module)
FSAM75SM60A SPMTM (Smart Power Module)
FSAT66L6X Low Voltage Single SPST Normally Open Analog Switch with TTL Compatible Control Input
FSAT66P5X Low Voltage Single SPST Normally Open Analog Switch with TTL Compatible Control Input
FSAT66 RES 49.9K-OHM 1% 0.1W 50PPM MET-FILM AXIAL BULK S-MIL-PRF-55182
相關代理商/技術參數
參數描述
FSAM30SM60SL 功能描述:IGBT 模塊 600V/30A Smart Power RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSAM50SM60A 功能描述:IGBT 晶體管 600V -50A SMART POWER MODULE RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FSAM75SM60A 功能描述:IGBT 模塊 600V -75A SMART POWER MODULE RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSAM75SM60SL 功能描述:IGBT 模塊 600V/75A Smart Power RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSAP502Y 制造商:Panduit Corp 功能描述:2 FIBER PLENUM ROUND 50UMINTER 制造商:Panduit Corp 功能描述:2 FIBER PLENUM ROUND 50UMINTERCONNECT CA - Cable Rools/Shrink Tubing
主站蜘蛛池模板: 碌曲县| 唐河县| 广饶县| 邯郸市| 介休市| 延长县| 夏邑县| 高碑店市| 尼木县| 海盐县| 德州市| 礼泉县| 镇康县| 衡水市| 岱山县| 泰安市| 望江县| 抚松县| 清远市| 万载县| 本溪市| 宜君县| 资源县| 兰州市| 兴业县| 甘孜| 通山县| 锡林浩特市| 张家界市| 交口县| 三亚市| 陵川县| 阳朔县| 湘潭市| 时尚| 温泉县| 屏东市| 凤山市| 泾川县| 麦盖提县| 金阳县|