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參數資料
| 型號： | FSB50550T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | Smart Power Module (SPM) |
| 中文描述： | AC MOTOR CONTROLLER, 3.5 A, DMA23 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 166K |
| 代理商： | FSB50550T |
2
www.fairchildsemi.com
FSB50550T Rev. A
F
Pin Descriptions
Note:
Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM. External connections should be made as indicated in Figure
2 and 5.
Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)
Pin Number
Pin Name
Pin Description
1
COM
IC Common Supply Ground
2
V
B(U)
V
CC(U)
IN
(UH)
IN
(UL)
NC
Bias Voltage for U Phase High Side FRFET Driving
3
Bias Voltage for U Phase IC and Low Side FRFET Driving
4
Signal Input for U Phase High-side
5
Signal Input for U Phase Low-side
6
No Connection
7
V
B(V)
V
CC(V)
IN
(VH)
IN
(VL)
NC
Bias Voltage for V Phase High Side FRFET Driving
8
Bias Voltage for V Phase IC and Low Side FRFET Driving
9
Signal Input for V Phase High-side
10
Signal Input for V Phase Low-side
11
No Connection
12
V
B(W)
V
CC(W)
IN
(WH)
IN
(WL)
NC
Bias Voltage for W Phase High Side FRFET Driving
13
Bias Voltage for W Phase IC and Low Side FRFET Driving
14
Signal Input for W Phase High-side
15
Signal Input for W Phase Low-side
16
No Connection
17
P
Positive DC–Link Input
18
U, V
S(U)
N
U
N
V
V, V
S(V)
N
W
W, V
S(W)
Output for U Phase & Bias Voltage Ground for High Side FRFET Driving
19
Negative DC–Link Input for U Phase
20
Negative DC–Link Input for V Phase
21
Output for V Phase & Bias Voltage Ground for High Side FRFET Driving
22
Negative DC–Link Input for W Phase
23
Output for W Phase & Bias Voltage Ground for High Side FRFET Driving
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
COM
VCC
LIN
HIN
VB
HO
VS
LO
(1) COM
(2) V
B(U)
(3) V
CC(U)
(4) IN
(UH)
(5) IN
(UL)
(6) NC
(7) V
B(V)
(8) V
CC(V)
(9) IN
(VH)
(10) IN
(VL)
(11) NC
(12) V
B(W)
(13) V
CC(W)
(14) IN
(WH)
(15) IN
(WL)
(16) NC
(17) P
(18) U, V
S(U)
(19) N
U
(20) N
V
(21) V, V
S(V)
(22) N
W
(23) W, V
S(W)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FSB50550T_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Smart Power Module (SPM㈢) |
| FSB50550TB | 功能描述:IGBT 模塊 500V, 1.2A, SPM5 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSB50550TB2 | 功能描述:IGBT 模塊 1.2A 500V SPM5 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSB50550U | 功能描述:IGBT 模塊 500V/1.2A Motion-SPM RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSB50550US | 功能描述:IGBT 模塊 500V, 1.2A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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