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參數資料
| 型號： | FSB50550T |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 運動控制電子 |
| 英文描述： | Smart Power Module (SPM) |
| 中文描述： | AC MOTOR CONTROLLER, 3.5 A, DMA23 |
| 文件頁數： | 4/8頁 |
| 文件大小： | 166K |
| 代理商： | FSB50550T |
4
www.fairchildsemi.com
FSB50550T Rev. A
F
Recommended Operating Conditions
Note:
(1) It is recommended the bootstrap diode D
1
to have soft and fast recovery characteristics with 600-V rating
(2) Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.
(3) RC coupling(R
and C
) at each input (indicated as dotted lines) may be used to prevent improper input signal due to surge noise. Signal input of SPM is compatible with stan-
dard CMOS or LSTTL outptus.
(4) Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C
1
, C
2
and C
3
should have good high-frequency characteristics to absorb high-frequency ripple current.
Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters
Note:
Attach the thermocouple on top of the heatsink-side of SPM (between SPM and heatsink if applied) to get the correct temperature measurement.
Figure 3. Case Temperature Measurement
Symbol
Parameter
Conditions
Value
Typ.
Units
Min.
Max.
V
PN
V
CC
V
BS
V
IN(ON)
V
IN(OFF)
Supply Voltage
Applied between P and N
-
300
400
V
Control Supply Voltage
Applied between V
CC
and COM
Applied between V
B
and output(U, V, W)
13.5
15
16.5
V
High-side Bias Voltage
13.5
15
16.5
V
Input ON Threshold Voltage
Applied between IN and COM
3.0
-
V
CC
V
Input OFF Threshold Voltage
0
-
0.6
V
t
dead
Blanking Time for Preventing
Arm-short
V
CC
=V
BS
=13.5 ~ 16.5V, T
J
≤
150°C
1.0
-
-
μ
s
f
PWM
PWM Switching Frequency
T
J
≤
150°C
-
15
-
kHz
COM
VCC
LIN
HIN
VB
HO
VS
LO
P
N
R
3
Inverter
Output
C
3
R
1
D
1
C
1
Micom
15-V Line
10
μ
F
One-Leg Diagram of SPM
These values depend on PWM
control algorithm
* Example of bootstrap paramters:
C
1
= C
2
= 1
μ
F ceramic capacitor,
R
1
= 56
,
R
5
C
5
HIN
LIN
V
DC
0
0
0
1
1
0
1
1
Open
Open
Output
Z
0
V
DC
Forbidden
Z
Note
Both FRFET Off
Low-side FRFET On
High-side FRFET On
Shoot-through
Same as (0, 0)
C
2
Detecting Point
14.50mm
3.80mm
MOSFET
Case Temperature(Tc)
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相關代理商/技術參數 |
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|---|---|
| FSB50550T_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Smart Power Module (SPM㈢) |
| FSB50550TB | 功能描述:IGBT 模塊 500V, 1.2A, SPM5 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSB50550TB2 | 功能描述:IGBT 模塊 1.2A 500V SPM5 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSB50550U | 功能描述:IGBT 模塊 500V/1.2A Motion-SPM RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSB50550US | 功能描述:IGBT 模塊 500V, 1.2A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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