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參數資料
| 型號： | FXT453 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
| 中文描述： | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 36K |
| 代理商： | FXT453 |
NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93
FEATURES
*
100 Volt V
CEO
*
1 Amp continuous current
*
P
tot
= 1 Watt
REFER TO ZTX453 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Power Dissipation at T
amb
=25°C
P
tot
1
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
120
V
I
C
=100
μ
A, I
E
=0
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
100
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A, I
C
=0
Collector Cut-Off
Current
I
CBO
0.1
μ
A
V
CB
=100V, I
E
=0
Emitter Cut-Off Current I
EBO
0.1
μ
A
V
EB
=4V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.7
V
I
C
=150mA, I
B
=15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.3
V
I
C
=150mA, I
B
=15mA*
Static Forward Current
Transfer Ratio
h
FE
40
10
200
I
C
=150mA, V
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
150
MHz
I
=50mA, V
CE
=10V
f=100MHz
Output Capacitance
C
obo
15
pF
V
CB
=10V, f=1MHz
E-Line
TO92 Compatible
FXT453
3-33
B
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