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參數(shù)資料
| 型號(hào)： | FZT593 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 1 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 40K |
| 代理商： | FZT593 |
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
%
COMPLEMENTARY TO FZT493
PARTMARKING DETAIL - FZT593
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
-120
V
Collector-Emitter Voltage
-100
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
-1
A
Base Current
-200
mA
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-120
V
I
C
=-100
μ
A
V
(BR)CEO
-100
V
I
C
=-10mA*
V
(BR)EBO
-5
V
I
E
=-100
μ
A
Collector Cut-Off Current
I
CBO
-100
nA
V
CB
=-100V
Emitter Cut-Off Current
I
EBO
-100
nA
V
EB
=-4V
Collector-Emitter Cut-Off Current
I
CES
-100
nA
V
CES
=-100V
Saturation Voltages
V
CE(sat)
-0.2
-0.3
V
V
I
C
=-250mA,I
B
=-25mA*
I
C
=-500mA I
B
=-50mA*
V
BE(sat)
-1.1
V
I
C
=-500mA,I
B
=-50mA*
Base-Emitter Turn-on Voltage
V
BE(on)
-1.0
V
I
C
=-1mA, V
CE
=-5V*
Static Forward Current Transfer
Ratio
h
FE
100
100
100
50
300
I
C
=-1mA, V
CE
=-5V
I
C
=-250mA,V
CE
=-5V*
I
C
=-500mA, V
=-5V*
I
C
=-1A, V
CE
=-5V*
Transition Frequency
f
T
50
MHz
I
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
5
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
For typical Characteristics graphs see FMMT593 datasheet
FZT593
3 - 196
C
C
E
B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FZT593TA | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT593TC | 功能描述:兩極晶體管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FZT600 | 制造商:Diodes Incorporated 功能描述:DARLINGTON TRANSISTOR SOT-223 制造商:Diodes Incorporated 功能描述:DARLINGTON TRANSISTOR, SOT-223 制造商:Diodes Incorporated 功能描述:DARLINGTON TRANSISTOR, NPN, 140V, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:140V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:2W; DC Collector Current:2A; DC Current Gain hFE:20000 ;RoHS Compliant: Yes |
| FZT600 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR DARLINGTON SOT-223 |
| FZT600A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 2A I(C) | SOT-223 |
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